Datasheet4U Logo Datasheet4U.com

HM2309B - P-Channel Enhancement Mode Power MOSFET

Description

The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦188mΩ@VGS=-10V.
  • RDS(ON)≦266mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

📥 Download Datasheet

Datasheet preview – HM2309B

Datasheet Details

Part number HM2309B
Manufacturer H&M Semiconductor
File Size 894.67 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2309B Datasheet
Additional preview pages of the HM2309B datasheet.

📁 Similar Datasheet

Other Datasheets by H&M Semiconductor
  • HM2309 - P-Channel Enhancement Mode Power MOSFET
  • HM2309A - P-Channel Enhancement Mode Power MOSFET
  • HM2309APR - P-Channel Enhancement Mode Power MOSFET
  • HM2309C - P-Channel Enhancement Mode Power MOSFET
  • HM2309F - P-Channel Enhancement Mode Power MOSFET
  • HM2300 - N-Channel Enhancement Mode Power MOSFET
  • HM2300B - N-Channel Enhancement Mode Power MOSFET
  • HM2300C - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦188mΩ@VGS=-10V ● RDS(ON)≦266mΩ@VGS=-4.
Published: |