logo

HM2309B Datasheet, H&M Semiconductor

HM2309B mosfet equivalent, p-channel enhancement mode power mosfet.

HM2309B Avg. rating / M : 1.0 rating-13

datasheet Download

HM2309B Datasheet

Features and benefits


* RDS(ON)≦188mΩ@VGS=-10V
* RDS(ON)≦266mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC c.

Application


* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch Absolute Maximum Ratings.

Description

The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES
* RDS(ON).

Image gallery

HM2309B Page 1 HM2309B Page 2 HM2309B Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts